NickelMaghrebV1, Main, Exploration, bibRecord, 000591

Effect of deposition rate and thickness on the structural and electrical properties of evaporated Ni/glass and Ni/Si(100) thin films

Identifieur interne : 000591 ( Main/Exploration ); précédent : 000590; suivant : 000592

Effect of deposition rate and thickness on the structural and electrical properties of evaporated Ni/glass and Ni/Si(100) thin films

Auteurs : M. Hemmous [Algérie] ; A. Layadi [Algérie] ; A. Guittoum [Algérie] ; A. Bourzami [Algérie] ; A. Benabbas [Algérie]

Source :

Microelectronics journal [ 0959-8324 ] ; 2008.

RBID : Pascal:09-0046082

Descripteurs français

Pascal (Inist)
- Caractéristique électrique, Structure cristalline, Résistivité couche, RBS, Diffraction RX, Contrainte traction, Grosseur grain, Conductivité électrique, Joint grain, Effet surface, Nickel, Couche mince, Polycristal, Substrat Si, Substrat verre, Ni, 6855J, 7361A.
Wicri :
- topic : Nickel.

English descriptors

KwdEn :
- Crystal structure, Electrical characteristic, Electrical conductivity, Grain boundaries, Grain size, Nickel, Polycrystals, RBS, Sheet resistivity, Surface effect, Tensile stress, Thin films, XRD.

Abstract

We have studied the effect of substrates [glass and Si(1 0 0)], of Ni thickness (t_Ni) and of the deposition rate [v₁ = 13 nm/min and v₂ = 22 nm/min] on the structural and electrical properties of evaporated Ni thin films. The Ni thickness, measured by the Rutherford backscattering (RBS) technique, ranges from 28 to 200 nm. From X-ray diffraction, it was found that all samples are polycrystalline and grow with the < 111 > texture. From the measure of the lattice constant, we inferred that Ni/Si samples are under a higher tensile stress than the Ni/glass ones. Moreover, in Ni/glass deposited at v₁, stress is relived as t_Ni increases while those deposited at v₂ are almost stress-free. The grain size (D) in Ni/glass with low deposition rate monotonously increases (from 54 to 140 A) as t_Ni increases and are lower than those corresponding to Ni/Si. On the other hand, samples grown at v₂ have a constant D, for small t_Ni with D in Ni/glass larger than D in Ni/Si. Ni/glass deposited at low v₁ are characterized by a higher electrical resistivity (p) than those deposited at v₂. For the latter series, p is practically constant with t_Ni but decreases with increasing grain size, indicating that diffusion at the grain boundaries rather than surface effect is responsible for the variation of p in this thickness range. For the Ni/glass deposed at v₁ and the Ni/Si series, p has a more complex variation with thickness and deposition rate. These results will be discussed and correlated.

Affiliations:

Links toward previous steps (curation, corpus...)

to stream PascalFrancis, to step Corpus: 000212
to stream PascalFrancis, to step Curation: 000229
to stream PascalFrancis, to step Checkpoint: 000225
to stream Main, to step Merge: 000607
to stream Main, to step Curation: 000591

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effect of deposition rate and thickness on the structural and electrical properties of evaporated Ni/glass and Ni/Si(100) thin films</title>
<author><name sortKey="Hemmous, M" sort="Hemmous, M" uniqKey="Hemmous M" first="M." last="Hemmous">M. Hemmous</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Département de Physique, Université Ferhat Abbas</s1>
<s2>Sétif 19000</s2>
<s3>DZA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Algérie</country>
<wicri:noRegion>Sétif 19000</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Layadi, A" sort="Layadi, A" uniqKey="Layadi A" first="A." last="Layadi">A. Layadi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Département de Physique, Université Ferhat Abbas</s1>
<s2>Sétif 19000</s2>
<s3>DZA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Algérie</country>
<wicri:noRegion>Sétif 19000</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Guittoum, A" sort="Guittoum, A" uniqKey="Guittoum A" first="A." last="Guittoum">A. Guittoum</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Centre de Recherche Nucléaire d'Alger (CRNA)</s1>
<s2>Alger 16000</s2>
<s3>DZA</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Algérie</country>
<placeName><settlement type="city">Alger</settlement>
<region nuts="2">Wilaya d'Alger</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Bourzami, A" sort="Bourzami, A" uniqKey="Bourzami A" first="A." last="Bourzami">A. Bourzami</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Département de Physique, Université Ferhat Abbas</s1>
<s2>Sétif 19000</s2>
<s3>DZA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Algérie</country>
<wicri:noRegion>Sétif 19000</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Benabbas, A" sort="Benabbas, A" uniqKey="Benabbas A" first="A." last="Benabbas">A. Benabbas</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Laboratoire L. I. M.E. Université de Jijel</s1>
<s2>Jijel 1800</s2>
<s3>DZA</s3>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Algérie</country>
<wicri:noRegion>Laboratoire L. I. M.E. Université de Jijel</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="wicri:source">INIST</idno>
<idno type="inist">09-0046082</idno>
<date when="2008">2008</date>
<idno type="stanalyst">PASCAL 09-0046082 INIST</idno>
<idno type="RBID">Pascal:09-0046082</idno>
<idno type="wicri:Area/PascalFrancis/Corpus">000212</idno>
<idno type="wicri:Area/PascalFrancis/Curation">000229</idno>
<idno type="wicri:Area/PascalFrancis/Checkpoint">000225</idno>
<idno type="wicri:explorRef" wicri:stream="PascalFrancis" wicri:step="Checkpoint">000225</idno>
<idno type="wicri:doubleKey">0959-8324:2008:Hemmous M:effect:of:deposition</idno>
<idno type="wicri:Area/Main/Merge">000607</idno>
<idno type="wicri:Area/Main/Curation">000591</idno>
<idno type="wicri:Area/Main/Exploration">000591</idno>
</publicationStmt>
<sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Effect of deposition rate and thickness on the structural and electrical properties of evaporated Ni/glass and Ni/Si(100) thin films</title>
<author><name sortKey="Hemmous, M" sort="Hemmous, M" uniqKey="Hemmous M" first="M." last="Hemmous">M. Hemmous</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Département de Physique, Université Ferhat Abbas</s1>
<s2>Sétif 19000</s2>
<s3>DZA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Algérie</country>
<wicri:noRegion>Sétif 19000</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Layadi, A" sort="Layadi, A" uniqKey="Layadi A" first="A." last="Layadi">A. Layadi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Département de Physique, Université Ferhat Abbas</s1>
<s2>Sétif 19000</s2>
<s3>DZA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Algérie</country>
<wicri:noRegion>Sétif 19000</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Guittoum, A" sort="Guittoum, A" uniqKey="Guittoum A" first="A." last="Guittoum">A. Guittoum</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Centre de Recherche Nucléaire d'Alger (CRNA)</s1>
<s2>Alger 16000</s2>
<s3>DZA</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Algérie</country>
<placeName><settlement type="city">Alger</settlement>
<region nuts="2">Wilaya d'Alger</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Bourzami, A" sort="Bourzami, A" uniqKey="Bourzami A" first="A." last="Bourzami">A. Bourzami</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Département de Physique, Université Ferhat Abbas</s1>
<s2>Sétif 19000</s2>
<s3>DZA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Algérie</country>
<wicri:noRegion>Sétif 19000</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Benabbas, A" sort="Benabbas, A" uniqKey="Benabbas A" first="A." last="Benabbas">A. Benabbas</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Laboratoire L. I. M.E. Université de Jijel</s1>
<s2>Jijel 1800</s2>
<s3>DZA</s3>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Algérie</country>
<wicri:noRegion>Laboratoire L. I. M.E. Université de Jijel</wicri:noRegion>
</affiliation>
</author>
</analytic>
<series><title level="j" type="main">Microelectronics journal</title>
<title level="j" type="abbreviated">Microelectronics j.</title>
<idno type="ISSN">0959-8324</idno>
<imprint><date when="2008">2008</date>
</imprint>
</series>
</biblStruct>
</sourceDesc>
<seriesStmt><title level="j" type="main">Microelectronics journal</title>
<title level="j" type="abbreviated">Microelectronics j.</title>
<idno type="ISSN">0959-8324</idno>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Crystal structure</term>
<term>Electrical characteristic</term>
<term>Electrical conductivity</term>
<term>Grain boundaries</term>
<term>Grain size</term>
<term>Nickel</term>
<term>Polycrystals</term>
<term>RBS</term>
<term>Sheet resistivity</term>
<term>Surface effect</term>
<term>Tensile stress</term>
<term>Thin films</term>
<term>XRD</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Caractéristique électrique</term>
<term>Structure cristalline</term>
<term>Résistivité couche</term>
<term>RBS</term>
<term>Diffraction RX</term>
<term>Contrainte traction</term>
<term>Grosseur grain</term>
<term>Conductivité électrique</term>
<term>Joint grain</term>
<term>Effet surface</term>
<term>Nickel</term>
<term>Couche mince</term>
<term>Polycristal</term>
<term>Substrat Si</term>
<term>Substrat verre</term>
<term>Ni</term>
<term>6855J</term>
<term>7361A</term>
</keywords>
<keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Nickel</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We have studied the effect of substrates [glass and Si(1 0 0)], of Ni thickness (t<sub>Ni</sub>
) and of the deposition rate [v<sub>1</sub>
 = 13 nm/min and v<sub>2</sub>
 = 22 nm/min] on the structural and electrical properties of evaporated Ni thin films. The Ni thickness, measured by the Rutherford backscattering (RBS) technique, ranges from 28 to 200 nm. From X-ray diffraction, it was found that all samples are polycrystalline and grow with the < 111 > texture. From the measure of the lattice constant, we inferred that Ni/Si samples are under a higher tensile stress than the Ni/glass ones. Moreover, in Ni/glass deposited at v<sub>1</sub>
, stress is relived as t<sub>Ni</sub>
 increases while those deposited at v<sub>2</sub>
 are almost stress-free. The grain size (D) in Ni/glass with low deposition rate monotonously increases (from 54 to 140 A) as t<sub>Ni</sub>
 increases and are lower than those corresponding to Ni/Si. On the other hand, samples grown at v<sub>2</sub>
 have a constant D, for small t<sub>Ni</sub>
 with D in Ni/glass larger than D in Ni/Si. Ni/glass deposited at low v<sub>1</sub>
 are characterized by a higher electrical resistivity (p) than those deposited at v<sub>2</sub>
. For the latter series, p is practically constant with t<sub>Ni</sub>
 but decreases with increasing grain size, indicating that diffusion at the grain boundaries rather than surface effect is responsible for the variation of p in this thickness range. For the Ni/glass deposed at v<sub>1</sub>
 and the Ni/Si series, p has a more complex variation with thickness and deposition rate. These results will be discussed and correlated.</div>
</front>
</TEI>
<affiliations><list><country><li>Algérie</li>
</country>
<region><li>Wilaya d'Alger</li>
</region>
<settlement><li>Alger</li>
</settlement>
</list>
<tree><country name="Algérie"><noRegion><name sortKey="Hemmous, M" sort="Hemmous, M" uniqKey="Hemmous M" first="M." last="Hemmous">M. Hemmous</name>
</noRegion>
<name sortKey="Benabbas, A" sort="Benabbas, A" uniqKey="Benabbas A" first="A." last="Benabbas">A. Benabbas</name>
<name sortKey="Bourzami, A" sort="Bourzami, A" uniqKey="Bourzami A" first="A." last="Bourzami">A. Bourzami</name>
<name sortKey="Guittoum, A" sort="Guittoum, A" uniqKey="Guittoum A" first="A." last="Guittoum">A. Guittoum</name>
<name sortKey="Layadi, A" sort="Layadi, A" uniqKey="Layadi A" first="A." last="Layadi">A. Layadi</name>
</country>
</tree>
</affiliations>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=$WICRI_ROOT/Wicri/Terre/explor/NickelMaghrebV1/Data/Main/Exploration

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000591 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Exploration/biblio.hfd -nk 000591 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=    Wicri/Terre
   |area=    NickelMaghrebV1
   |flux=    Main
   |étape=   Exploration
   |type=    RBID
   |clé=     Pascal:09-0046082
   |texte=   Effect of deposition rate and thickness on the structural and electrical properties of evaporated Ni/glass and Ni/Si(100) thin films
}}

This area was generated with Dilib version V0.6.27.
Data generation: Fri Mar 24 23:14:20 2017. Site generation: Tue Mar 5 17:03:47 2024

	Serveur d'exploration sur le nickel au Maghreb
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur le nickel au Maghreb

Effect of deposition rate and thickness on the structural and electrical properties of evaporated Ni/glass and Ni/Si(100) thin films

Effect of deposition rate and thickness on the structural and electrical properties of evaporated Ni/glass and Ni/Si(100) thin films

Source :

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri